MRF6VP3091NR1 MRF6VP3091NR5
MRF6VP3091NBR1 MRF6VP3091NBR5
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
47
56
-- 6
54
53
4
52
-- 5 -- 3 -- 1 1 3-- 2 0 2
P3dB = 51.28 dBm (134.3 W)
Actual
Ideal
VDD
=50Vdc,IDQ
= 350 mA, f = 860 MHz
50
49
-- 4
P2dB = 51.06 dBm (127.6 W)
P1dB = 50.7 dBm (117.5 W)
55
51
48
ηD
Gps
VDD
=50Vdc,IDQ
= 350 mA, f = 860 MHz
50
10
1000
02010
30
40
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
100
Coss
Measured with
±30 mV(rms)ac @ 1 MHz, VGS
=0Vdc
24
1
0
70
100
23
21
19
60
50
40
30
Pout, OUTPUT POWER (WATTS)
Figure 5. CW Power Gain and Drain Efficiency
versus Output Power (Single--Ended
Narrowband Test Circuit)
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
22
20
17
200
20
Pin, INPUT POWER (dBm)
Figure 6. CW Output Power versus Input Power
(Single--Ended Narrowband Test Circuit)
P
out
, OUTPUT POWER (dBm)
16
25
10
20 4030 60 80 120100 140
23
21
Pout, OUTPUT POWER (WATTS)
Figure 7. CW Power Gain versus Output Power
(Single--Ended Narrowband Test Circuit)
G
ps
, POWER GAIN (dB)
20
130 150
Figure 8. CW Power Gain and Drain Efficiency
versus Output Power versus Temperature
(Single--Ended Narrowband Test Circuit)
Pout, OUTPUT POWER (WATTS)
G
ps
, POWER GAIN (dB)
18
25
1
22
24
23
100 200
IDQ
= 350 mA, f = 860 MHz
18
50 70 90 110
VDD
=40V
50 V
25_C
TC
=--30_C
85_C
Gps
19
21
20
VDD
=50Vdc,IDQ
= 350 mA, f = 860 MHz
0
70
10
η
D,
DRAIN EFFICIENCY (%)
18
10
Crss
10
17
19
22
24
45 V
ηD
TC
=--30_C
85_C
5025_C
10
20
30
40
60
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